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DMP3010LPS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(ON) 7.5m @ VGS = -10V 30V 10m @ VGS = -4.5V -31A ID TA = 25C (Note 5) -36A
Features and Benefits
* * * * * * * * * * Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(on) - Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile - Ideal for Thin Applications ESD HBM Protected up to 1kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation 30V P-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch. * * * Notebook Battery Power Management DC-DC Converters Loadswitch
Mechanical Data
* * * * * Case: PowerDI5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.097 grams (approximate)
Drain
S S
Pin 1 S G
S S
D D D D
Gate
S
D D D D
Source
G
Top View
Bottom View
Internal Schematic
Top View Pin Configuration
Ordering Information (Note 3)
Part Number DMP3010LPS-13
Notes:
Case PowerDI5060-8
Packaging 2500 / Tape & Reel
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
D D D D
Logo
P3010LS YY WW
Part no.
Xth week: 01 ~ 53 Year: "09" = 2009
S S S G
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
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December 2010
(c) Diodes Incorporated
DMP3010LPS
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Continuous Drain Current (Note 5) VGS = 4.5V Continuous Drain Current (Note 4) VGS = 10V Pulsed Drain Current (Notes 4 & 7) Avalanche Current (Notes 8 & 9) Repetitive Avalanche Energy (Notes 8 & 9) L = 1mH Steady State Steady State Steady State TA = 25C TA = 70C TA = 25C TA = 70C TA = 25C TA = 70C Symbol VDSS VGSS ID ID ID IDM IAR EAR Value -30 20 -36 -29 -31 -25 -14.5 -11.5 -100 -17.5 153 Unit V V A A A A A mJ
Thermal Characteristics
Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25C (Note 5) Power Dissipation (Notes 5 & 6) Thermal Resistance, Junction to Case @TC = 25C (Notes 5 & 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA PD RJC TJ, TSTG Value 2.18 55 14.37 8.7 58.7 2.13 -55 to +150 Unit W C/W W C/W W C/W C
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd
Min -30 -1.1 -
Typ -1.6 5.7 7.2 30 -0.65 6234 1500 774 1.28 126.2 59.2 16.1 15.7 11.4 9.4 260.7 99.3
Max -1.0 100 -2.1 7.5 10 -1.0 -
Unit V A nA V m S V pF pF pF nC nC nC nC ns ns ns ns
Test Condition VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250A VGS = -10V, ID = -10A VGS = -4.5V, ID = -10A VDS = -15V, ID = -10A VGS = 0V, IS = -1A VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -10A VDS = -15V, VGS = -4.5V, ID = -10A
tD(on)
tr tD(off) tf
VDS = -15V, VGEN = -10V, RG = 6, ID = -1A
4. Device mounted on FR-4 PCB with 1 inch square 2 oz. Copper, single sided. 5. Device mounted on FR-4 PCB with infinite heatsink. 6. RJC is guaranteed by design while RCA is determined by the user's board design. 7. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25C 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing.
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
2 of 6 www.diodes.com
December 2010
(c) Diodes Incorporated
DMP3010LPS
30
VGS = -10V
30
25 -ID, DRAIN CURRENT (A)
VGS = -4.5V
25 -ID, DRAIN CURRENT (A)
VDS = -5V
VGS = -5.0V
20
VGS = -3.5V VGS = -3.0V
20
15
VGS = -2.5V
15
10
10
TA = 150C
5
VGS = -2.0V
5 0 0 0.5 1 1.5 2 2.5 3 3.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 4 0
TA = 125C
TA = 85C T A = 25C TA = -55C
0
0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic
3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.020
0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0
TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C VGS = -4.5V
0.016
0.012
0.008
VGS = -4.5V
0.004
VGS = -10V
0
0
5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
30
0
10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
5
30
1.6
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
0.020
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.4
0.016
1.2
0.012
1.0
VGS = -10V ID = -20A
0.008
VGS = -4.5V ID = -10A
0.8
VGS = -4.5V ID = -10A
0.004
VGS = -10V ID = -20A
0.6 -50
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
-25
0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
3 of 6 www.diodes.com
December 2010
(c) Diodes Incorporated
DMP3010LPS
2.5 -VGS(TH), GATE THRESHOLD VOLTAGE (V)
30
2.0 -IS, SOURCE CURRENT (A)
25
20
1.5
ID = -1mA
15
T A = 25C
ID = -250A
1.0
10
0.5
5
0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000 CT, JUNCTION CAPACITANCE (pF)
Ciss
0
0
0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current
1.4
100,000
-IDSS, LEAKAGE CURRENT (nA)
10,000
T A = 150C
Coss
1,000
T A = 125C
1,000
Crss
100
TA = 85C
10
f = 1MHz
100 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20
1 0
TA = 25C
5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V)
30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
10 -VGS, GATE-SOURCE VOLTAGE (V)
8
VDS = -15V ID = -10A
6
4
2
0
0
40 60 80 100 120 140 Qg , TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge
20
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
4 of 6 www.diodes.com
December 2010
(c) Diodes Incorporated
DMP3010LPS
D = 0.7 D = 0.5 D = 0.3
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 97C/W P(pk)
D = 0.02 D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 DUT mounted on FR-4 PCB with minimum recommended pad layout
D = Single Pulse
0.001
0.01
0.1
1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response
100
1,000
Package Outline Dimensions
PowerDI5060-8L Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 c 0.230 0.330 0.277 D 5.15BSC D1 4.70 5.10 4.90 D2 3.50 4.40 3.90 E 6.15BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 e 1.27BSC G 0.51 0.71 0.61 L 0.51 0.71 0.61 L1 0.050 0.20 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 10 12 11 1 6 8 7 All Dimensions in mm
D D1
DETAIL A
(4x)
c E E1 b (8x) L D2 e
A1
1 (4x)
b2 (4x) DETAIL A E2 A M1 G L1 M
Suggested Pad Layout
X Y2
Y1 Y
X1
G1 C Y3 (4x) X2 (8x) G
Dimensions C G G1 X X1 X2 Y Y1 Y2 Y3
Value (in mm) 1.270 0.660 0.820 4.420 4.100 0.610 6.610 3.810 1.020 1.270
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
5 of 6 www.diodes.com
December 2010
(c) Diodes Incorporated
DMP3010LPS
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMP3010LPS
Document number: DS32239 Rev. 3 - 2
6 of 6 www.diodes.com
December 2010
(c) Diodes Incorporated

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